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Device instability of postannealed TiOx thin-film transistors under gate bias stresses
- Issue Date
- Mar-2013
- Publisher
- American Institute of Physics
- Citation
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, v.31, no.2, pp 1 - 5
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
- Volume
- 31
- Number
- 2
- Start Page
- 1
- End Page
- 5
- ISSN
- 1071-1023
2166-2746
- Abstract
- This paper investigates the negative bias instability (NBS) and positive bias instability (PBS) of titanium oxide (TiOx) thin-film transistors (TFTs) with different annealing temperatures. Structural analyses suggested that TiOx films annealed at 450 and 550 degrees C had average grain sizes of 200 and 400 nm, respectively. A TiOx TFT annealed at 550 degrees C exhibited respective threshold voltage (V-th) shifts of only -1.4 and 10.2V under NBS and PBS conditions. The origin of the instability was found to be a charge trapping mechanism caused by different grain sizes, boundaries, and changes in band edge states below the conduction band, which acted as electron and hole trap sites.
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Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)