Effective multi-step Ge condensation process using intermittent SiO2 strip to obtain a high-Ge concentration and a thick Ge-on-insulator (GeOI) substrate for p-MOSFET
- Authors
- Kim, Tae-Hyun; Park, Jea-Gun
- Issue Date
- Feb-2013
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- SOI; Ge; Ge-on-insulator; Gecondensation; Intermittent strip
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.62, no.3, pp.531 - 535
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 62
- Number
- 3
- Start Page
- 531
- End Page
- 535
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/163497
- DOI
- 10.3938/jkps.62.531
- ISSN
- 0374-4884
- Abstract
- The effect of an intermittent SiO2 strip process in multi-step oxidation on the physical properties of a condensed Ge-on-insulator (GeOI) layer was investigated to realize a higher Ge concentration. By utilizing an intermittent SiO2 strip during the condensation process, we demonstrated a 21-nm GeOI layer with a Ge concentration of higher than 95 at% and confirmed that total process time to reach a Ge concentration higher than 95 at% could be reduced by maximum of 77% compared to a conventional process without the SiO2 strip. This was attributed to the intermittent SiO2 strip process causing Ge atoms to be volatized in the O-2 environment during the condensation process. The intermittent SiO2 strip is essential to achieve a Ge concentration higher than 95 at% and is very effective in realizing a high Ge concentration and a thick Ge-on-insulator substrate.
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