Electrical and Structural Analyses of Solution-Processed Li-Doped ZnO Thin Film Transistors Exposed to Ambient Conditions
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Tae Sung | - |
dc.contributor.author | Koo, Ja Hyun | - |
dc.contributor.author | Kim, Tae Yoon | - |
dc.contributor.author | Hong, Jin Pyo | - |
dc.date.accessioned | 2022-07-16T11:45:02Z | - |
dc.date.available | 2022-07-16T11:45:02Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2013-01 | - |
dc.identifier.issn | 1882-0778 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/163669 | - |
dc.description.abstract | We report the electrical and structural features of various Li-doped ZnO thin-film transistors (TFTs) grown via a chemical solution process at low temperature. The time-dependent transfer curves for the 10 at. % Li-doped ZnO TFTs, including second-order lowered off-current magnitude, exhibited only a negative shift of -1.07 V for 25 days, compared with a -21.83 V negative shift of undoped ZnO TFTs. Secondary ion mass spectroscopy and X-ray photoelectron spectroscopy observations clearly demonstrated the structure of Li dopants and the reduction of oxygen vacancies after appropriate doping processes. Finally, the nature of improved stability in the Li-doped ZnO TFTs is described. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Electrical and Structural Analyses of Solution-Processed Li-Doped ZnO Thin Film Transistors Exposed to Ambient Conditions | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jin Pyo | - |
dc.identifier.doi | 10.7567/APEX.6.011101 | - |
dc.identifier.scopusid | 2-s2.0-84871533752 | - |
dc.identifier.wosid | 000313348000001 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS EXPRESS, v.6, no.1, pp.1 - 4 | - |
dc.relation.isPartOf | APPLIED PHYSICS EXPRESS | - |
dc.citation.title | APPLIED PHYSICS EXPRESS | - |
dc.citation.volume | 6 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LOW-TEMPERATURE | - |
dc.subject.keywordPlus | Ambient conditions | - |
dc.subject.keywordPlus | Chemical solutions | - |
dc.subject.keywordPlus | Doping process | - |
dc.subject.keywordPlus | Li-dopants | - |
dc.subject.keywordPlus | Low temperatures | - |
dc.subject.keywordPlus | Negative shift | - |
dc.subject.keywordPlus | Off-current | - |
dc.subject.keywordPlus | Reduction of oxygen | - |
dc.subject.keywordPlus | Second orders | - |
dc.subject.keywordPlus | Secondary ion mass spectroscopy | - |
dc.subject.keywordPlus | Solution-processed | - |
dc.subject.keywordPlus | Structural feature | - |
dc.subject.keywordPlus | Thin-film transistor (TFTs) | - |
dc.subject.keywordPlus | Time-dependent | - |
dc.subject.keywordPlus | Transfer curves | - |
dc.subject.keywordPlus | ZnO | - |
dc.identifier.url | https://iopscience.iop.org/article/10.7567/APEX.6.011101 | - |
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