Electrical and Structural Analyses of Solution-Processed Li-Doped ZnO Thin Film Transistors Exposed to Ambient Conditions
- Authors
- Kang, Tae Sung; Koo, Ja Hyun; Kim, Tae Yoon; Hong, Jin Pyo
- Issue Date
- Jan-2013
- Publisher
- IOP PUBLISHING LTD
- Citation
- APPLIED PHYSICS EXPRESS, v.6, no.1, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS EXPRESS
- Volume
- 6
- Number
- 1
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/163669
- DOI
- 10.7567/APEX.6.011101
- ISSN
- 1882-0778
- Abstract
- We report the electrical and structural features of various Li-doped ZnO thin-film transistors (TFTs) grown via a chemical solution process at low temperature. The time-dependent transfer curves for the 10 at. % Li-doped ZnO TFTs, including second-order lowered off-current magnitude, exhibited only a negative shift of -1.07 V for 25 days, compared with a -21.83 V negative shift of undoped ZnO TFTs. Secondary ion mass spectroscopy and X-ray photoelectron spectroscopy observations clearly demonstrated the structure of Li dopants and the reduction of oxygen vacancies after appropriate doping processes. Finally, the nature of improved stability in the Li-doped ZnO TFTs is described.
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