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Characteristics of SnSx by atomic layer deposition for CIGS solar cells
- Issue Date
- 2013
- Publisher
- Electrochemical Society Inc.
- Citation
- ECS Transactions, v.58, no.10, pp.87 - 94
- Indexed
- SCOPUS
- Journal Title
- ECS Transactions
- Volume
- 58
- Number
- 10
- Start Page
- 87
- End Page
- 94
- ISSN
- 1938-5862
- Abstract
- Tin sulfide (SnSx=1,2) films were deposited by atomic layer deposition (ALD) using Tetrakis(dimethylamino)tin (TDMASn) and hydrogen sulfide (H2S) at different temperatures (120 to 180 °C). The crystal structure of SnSx at 140 °C is SnS2 hexagonal and that of SnSx above 160 °C is observed to have an SnS orthorhombic structure. In addition, the band gap of SnSx ALD films above 160 °C displayed ∼ 1.66 eV changing sharply in comparison with ∼ 2.50 eV of SnS x deposited below 140 °C. This data indicates that process temperatures play an important role in the effect of SnSx deposition. Therefore, SnS2 and SnS films can be widely used as alternative materials for thin film solar.
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Related Researcher
- Jeon, Hyeongtag
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)