Nonvolatile Hybrid Memory Cell Embedded with Ni Nanocrystals in Poly(3-hexylthiophene)
- Authors
- Lee, Jong-Dae; Park, Jea-Gun
- Issue Date
- Dec-2012
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.12, pp.1 - 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 51
- Number
- 12
- Start Page
- 1
- End Page
- 3
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/164038
- DOI
- 10.1143/JJAP.51.120202
- ISSN
- 0021-4922
- Abstract
- We developed a cross-bar nonvolatile hybrid memory cell embedded with Ni nanocrystals in poly(3-hexylthiophene) (P3HT) with cell area of 4F(2), where F is a feature size. The cell demonstrated nonvolatile memory characteristics, such as a memory margin (I-on/I-off ratio) of similar to 5 x 10, over 103 endurance cycles of program-and-erase, and a retention time of 10(4) s at 85 degrees C. In addition, the mechanism of nonvolatile memory operation for the hybrid memory cell was confirmed by the combination of space-charge-limited current and a Fowler-Nordheim tunneling conduction.
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