Nonvolatile Hybrid Memory Cell Embedded with Ni Nanocrystals in Poly(3-hexylthiophene)

Abstract

We developed a cross-bar nonvolatile hybrid memory cell embedded with Ni nanocrystals in poly(3-hexylthiophene) (P3HT) with cell area of 4F(2), where F is a feature size. The cell demonstrated nonvolatile memory characteristics, such as a memory margin (I-on/I-off ratio) of similar to 5 x 10, over 103 endurance cycles of program-and-erase, and a retention time of 10(4) s at 85 degrees C. In addition, the mechanism of nonvolatile memory operation for the hybrid memory cell was confirmed by the combination of space-charge-limited current and a Fowler-Nordheim tunneling conduction.