Bidirectional Two-Terminal Switching Device Using Schottky Barrier for Spin-Transfer-Torque Magnetic Random Access Memory
- Authors
- Park, Yong-Sik; Kil, Gyu-Hyun; Song, Yun-Heub
- Issue Date
- Oct-2012
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.10, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 51
- Number
- 10
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/164541
- DOI
- 10.1143/JJAP.51.106501
- ISSN
- 0021-4922
- Abstract
- We present a bidirectional two-terminal switching device using a Schottky barrier for spin-transfer-torque magnetic random access memory (STT-MRAM), which is composed of a Schottky barrier contact with a metal/semiconductor/metal (M/S/M) structure. The proposed M/S/M switching device provides a bidirectional current flow sufficient to write STT-MRAM using a punch through with an extended depletion region at a junction under a reverse bias of M/S or S/M. In addition, a high on-off ratio of 105 is confirmed under the read condition, which is acceptable for the operation of STT-MRAM. From this work, it is expected that an M/S/M structure with bilateral Schottky junctions will be a promising switch device for STT-MRAM beyond 20 nm.
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