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Multiresistance Characteristics of PCRAM With Ge1Cu2Te3 and Ge2Sb2Te5 Films
- Issue Date
- Oct-2012
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- Ge1Cu2Te3 (GCT); Ge2Sb2Te5 (GST); multilevel cell (MLC); phase-change random accessmemory (PCRAM)
- Citation
- IEEE Electron Device Letters, v.33, no.10, pp 1399 - 1401
- Pages
- 3
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- IEEE Electron Device Letters
- Volume
- 33
- Number
- 10
- Start Page
- 1399
- End Page
- 1401
- ISSN
- 0741-3106
1558-0563
- Abstract
- A phase-change random access memory (PCRAM) with multiresistance characteristics was fabricated. In this multiple PCRAM device, Ge2Sb2Te5 (GST) and Ge1Cu2Te3 (GCT) are utilized as phase-change materials to realize high-and middle-resistance states, respectively. Since GCT has simultaneously lower melting point and higher crystallization temperature than GST, recording of multiple states was directly achieved without any additional step. It was confirmed that multiple resistances of 10(3), 10(4), and 10(5) Omega were measured by a selection of current pulse during crystallization. From this work, it is expected that a device structure with GST and GCT can be one of the candidates for an effective multilevel cell operation in PCRAM.
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Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)