Remote NH3 plasma passivation on the interface between the remote plasma Al2O3 atomic layer deposited and 6H SiC substrate
- Authors
- Heo, Seung Chan; Yoo, Dongjun; Choi, Moonsuk; Choi, Changhwan
- Issue Date
- Oct-2012
- Publisher
- KOREAN ASSOC CRYSTAL GROWTH, INC
- Keywords
- SiC; ALD Al2O3; Plasma Passivation
- Citation
- JOURNAL OF CERAMIC PROCESSING RESEARCH, v.13, no.5, pp.657 - 661
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF CERAMIC PROCESSING RESEARCH
- Volume
- 13
- Number
- 5
- Start Page
- 657
- End Page
- 661
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/164583
- DOI
- 10.36410/jcpr.2012.13.5.657
- ISSN
- 1229-9162
- Abstract
- We investigated the effects of remote NH3 plasma passivation on the interfacial properties between 6H SiC substrate and Al2O3 gate dielectric deposited by remote-plasma atomic layer deposition in a metal-oxide-semiconductor device. X-ray photoelectron spectroscopy and Auger emission spectroscopy analysis reveal that nitrogen is clearly incorporated into the Al2O3/SiC interface. Atomic force microscopy shows negligible damage on the plasma treated SiC surface. A lower leakage current and higher breakdown voltage are attained by the remote plasma passivation. The interfacial state density of the as-deposited sample with the NH3 treatment is about 4 times lower than that of sample without nitrogen passivation and post forming gas annealing improves the interface quality further.
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