Organic-inorganic nanohybrid nonvolatile memory transistors for flexible electronics
- Authors
- Han, Kyu Seok; Park, Yerok; Han, Gibok; Lee, Byoung Hoon; Lee, Kwang Hyun; Son, Dong Hee; Im, Seongil; Sung, Myung Mo
- Issue Date
- Sep-2012
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- JOURNAL OF MATERIALS CHEMISTRY, v.22, no.36, pp.19007 - 19013
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF MATERIALS CHEMISTRY
- Volume
- 22
- Number
- 36
- Start Page
- 19007
- End Page
- 19013
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/164760
- DOI
- 10.1039/c2jm32767h
- ISSN
- 0959-9428
- Abstract
- We report on a low-temperature fabrication of organic-inorganic nanohybrid nonvolatile memory transistors using molecular layer deposition combined with atomic layer deposition. A 3 nm ZnO:Cu charge trap layer is sandwiched between 6 nm tunneling and 20 nm blocking self-assembled organic layers. First, we identify a large memory window of 14.1 V operated at +/- 15 V using metal-oxide-semiconductor capacitors. Second, we apply the capacitor structure to the nonvolatile memory transistors which operate in the low voltage range of -1 to 3 V. The writing/erasing (+8 V/-12 V) current ratio of similar to 10(3) of the memory transistors is maintained during the static and dynamic retention measurements. The reported organic-inorganic devices offer new opportunities to develop low-voltage-driven flexible memory electronics fabricated at low temperatures.
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