Electrical Bistabilities and Memory Stabilities of Organic Bistable Devices Utilizing C-60 Molecules Embedded in a Polymethyl Methacylate Matrix with an Al2O3 Blocking Layer
- Authors
- Ko, Seong Hoon; Yoo, Chan Ho; Kim, Tae Whan
- Issue Date
- Jul-2012
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.159, no.8, pp.G93 - G96
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Volume
- 159
- Number
- 8
- Start Page
- G93
- End Page
- G96
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/165129
- DOI
- 10.1149/2.074208jes
- ISSN
- 0013-4651
- Abstract
- Current-voltage (I-V) curves for Al/fullerene (C-60) nanoparticles embedded in poly(methylmethacrylate) (PMMA) layer/indium-tin oxide (ITO) organic bistable devices (OBDs) with an Al2O3 blocking layer showed a current bistability. The ON and OFF currents of the OBDs with an Al2O3 blocking layer at 1 V were 1 x 10(-5) and 1 x 10(-8) angstrom, respectively, and their ON/OFF ratio is 1 x 10(3), which was much larger than those of the OBDs without an Al2O3 blocking layer. Write-read-erase-read characteristics showed that the OBDs exhibited wide-range current hysteresis, which could be used as rewritable nonvolatile memory cells. The endurance number of the ON/OFF switchings for the OBDs was above 5 x 10(4) cycles. The effect of the Al2O3 blocking layer on the Al/C-60 nanoparticles embedded in PMMA layer/Al2O3/ITO device is described on the basis of the I-V results.
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