CHARACTERISTICS OF FABRICATED SiC RADIATION DETECTORS FOR FAST NEUTRON DETECTION
- Authors
- 이철호; 김한수; 하장호; 박세환; 박현서; 김기동; 박준식; 김용균
- Issue Date
- Jun-2012
- Publisher
- 대한방사선방어학회
- Keywords
- MCNPX; Silicon carbide (SiC); Neutron detector; Fast neutron; Response spectrum; Linearity
- Citation
- 방사선방어학회지, v.37, no.2, pp.70 - 74
- Indexed
- KCI
- Journal Title
- 방사선방어학회지
- Volume
- 37
- Number
- 2
- Start Page
- 70
- End Page
- 74
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/165359
- DOI
- 10.14407/jrp.2012.37.2.070
- ISSN
- 2508-1888
- Abstract
- Silicon carbide (SiC) is a promising material for neutron detection at harsh environments because of its capability to withstand strong radiation fields and high temperatures. Two PIN-type SiC semiconductor neutron detectors, which can be used for nuclear power plant (NPP) applications, such as in-core reactor neutron flux monitoring and measurement, were designed and fabricated. As a preliminary test, MCNPX simulations were performed to estimate reaction probabilities with respect to neutron energies. In the experiment, I-V curves were measured to confirm the diode characteristic of the detectors, and pulse height spectra were measured for neutron responses by using a 252Cf neutron source at KRISS (Korea Research Institute of Standards and Science), and a Tandem accelerator at KIGAM (Korea Institute of Geoscience and Mineral Resources). The neutron counts of the detector were linearly increased as the incident neutron flux got larger.
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