Reduction of Leakage Current in InGaN-based LEDs with V-pit Embedded Structures
- Authors
- Park, Jinsub; Ha, Jun-Seok
- Issue Date
- May-2012
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- LED; Nitride; Leakage current; V-pit
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.60, no.9, pp.1367 - 1370
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 60
- Number
- 9
- Start Page
- 1367
- End Page
- 1370
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/165701
- DOI
- 10.3938/jkps.60.1367
- ISSN
- 0374-4884
- Abstract
- We investigated the effects of V-pit structures embedded in the active region of n-GaN on the leakage current and the emission efficiency in InGaN/GaN light-emitting diodes (LEDs). Size-controlled V-pits were used for dislocation filtering. The V-shaped pit size was controlled by manipulating the growth temperature and pressure. The highest reverse voltage value was achieved with 150-nm-sized V-pit-embedded LEDs, which could be attributed to effective blocking of the threading dislocations that were acting as a leakage current source.
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