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Perpendicular magnetization of CoZr/Pt multilayers
- Authors
- Kil, Joon Pyo; Bae, Gi Yeol; Suh, Dong Ik; Suh, Duk Young; Park, Wanjun; Choi, Won Joon; Noh, Jae Sung
- Issue Date
- May-2012
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Magnetic tunnel junction; Perpendicular magnetic anisotropy; Thermal magnetization stability
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.60, no.10, pp.1690 - 1694
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 60
- Number
- 10
- Start Page
- 1690
- End Page
- 1694
- ISSN
- 0374-4884
- Abstract
- Recently, the perpendicular magnetization of tunnel junctions has been proposed as a way to reduce the size of spin-transfer torque random access memories. In order to determine the free layer of a magnetic tunnel junction, we present a Co(90)Zr(10) alloy that is expected to have a higher polarization than any other soft magnet. At a thickness of 0.6 nm, CoZr successfully forms a perpendicular magnetization because of the interfacial anisotropy on the CoZr/Pt interfaces. Unlike the Co/Pt multilayer, the CoZr/Pt multilayer shows magnetization recovery following 1.5-T field cooling after 300 A degrees C annealing because Zr insertion prevents the formation of a CoPt alloy. This work proposes CoZr as a free-layer candidate for magnetic tunnel junctions due to its advantages of lower switching current and higher thermal stability.
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Related Researcher
- Park, Wan jun
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)