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Improved emission efficiency of a-plane GaN light emitting diodes with silica nano-spheres integrated into a-plane GaN buffer layer
- Authors
- Park, Sung Hyun; Park, Jinsub; You, Duck-Jae; Joo, Kisu; Moon, Daeyoung; Jang, Jeonghwan; Kim, Donguk; Chang, Hojun; Moon, Sungnam; Song, Yoo-Kyung; Lee, Gun-Do; Jeon, Heonsu; Xu, Jimmy; Nanishi, Yasuishi; Yoon, Euijoon
- Issue Date
- May-2012
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.100, no.19, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 100
- Number
- 19
- Start Page
- 1
- End Page
- 4
- ISSN
- 0003-6951
- Abstract
- A simple and inexpensive technique to improve the emission efficiency of nonpolar a-plane light emitting diodes (LEDs) is proposed. The 3-dimensional growth nature of a-plane GaN was utilized to form the regrowth template of a-plane GaN. Subsequently, the controlled integration of silica nano-spheres (CIS) into the regrowth template is performed to improve the crystal quality of a-plane GaN by epitaxial lateral overgrowth method. In addition, the CIS improves light extraction by the scattering process. The light output power from the CIS a-plane GaN LEDs showed 130%-150% increase compared to that of LED without silica nano-spheres.
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
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Related Researcher
- Park, Jinsub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)