Semiconducting behavior of niobium-doped titanium oxide in the amorphous state
- Authors
- Ok, Kyung-Chul; Park, Joseph; Lee, Ju Ho; Ahn, Byung Du; Lee, Je Hun; Chung, Kwun-Bum; Park, Jin-Seong
- Issue Date
- Apr-2012
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.100, no.14, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 100
- Number
- 14
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/165838
- DOI
- 10.1063/1.3698389
- ISSN
- 0003-6951
- Abstract
- Electrical properties of Nb-doped titanium oxide films were evaluated with respect to annealing temperatures. Although an amorphous phase is preserved up to 450 degrees C, x-ray absorption spectroscopy analyses indicate that crystal field splitting in the conduction band begins to take place at this temperature. Such molecular orbital ordering effects induce a semiconducting behavior, which is manifested by working thin film transistor devices with field effect mobility values as high as 0.64 cm(2)/Vs. X-ray photoelectron spectroscopy studies disclose a drastic increase in Nb+5 states upon heat treatment, and these may be attributed to oxygen deficient states that generate free electrons.
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