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Heteroepitaxial Growth of GaN on Various Powder Compounds (AlN, LaN, TiN, NbN, ZrN, ZrB2, VN, BeO) by Hydride Vapor Phase Epitaxy
- Authors
- Park, Jinsub; Ha, Jun-Seok; Hong, Soon-Ku; Lee, Seog Woo; Cho, Meoung Whan; Yao, Takafumi; Lee, Hae Woo; Lee, Sang Hwa; Lee, Sung-Keun; Lee, Hyo-Jong
- Issue Date
- Apr-2012
- Publisher
- 대한금속·재료학회
- Keywords
- GaN; heteroepitaxy; powder; hydride vapor phase epitaxy
- Citation
- Electronic Materials Letters, v.8, no.2, pp 135 - 139
- Pages
- 5
- Indexed
- SCIE
SCOPUS
KCICANDI
- Journal Title
- Electronic Materials Letters
- Volume
- 8
- Number
- 2
- Start Page
- 135
- End Page
- 139
- ISSN
- 1738-8090
2093-6788
- Abstract
- We investigated the nucleation and growth behavior of GaN on various powders by hydride vapor phase epitaxy. In relative comparison, the nucleation tendency of GaN on each powder can be summarized as AlN > LaN, TiN, NbN > ZrN > ZrB2 > VN, BeO, indicating that the number of nucleation sites increased from right to left. LaN and NbN have not yet been reported as buffer materials for GaN growth. Of these, NbN is expected to be a good buffer material because the interatomic distance on the NbN (111) plane has only 2% difference from that on the GaN (0001) plane.
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
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Related Researcher
- Park, Jinsub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)