The effects of organic material-treated SiO2 dielectric surfaces on the electrical characteristics of inorganic amorphous In-Ga-Zn-O thin film transistorsopen access
- Authors
- Park, Mijeong; Jang, Jaeyoung; Park, Seonuk; Kim, Jiye; Seong, Jiehyun; Hwang, Jiyoung; Park, Chan Eon
- Issue Date
- Mar-2012
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.100, no.10, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 100
- Number
- 10
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166025
- DOI
- 10.1063/1.3691920
- ISSN
- 0003-6951
- Abstract
- We investigated the influence of organic dielectric surfaces on the electrical characteristics of inorganic amorphous indium-gallium-zinc oxide (a-IGZO)-based thin film transistors (TFTs). To modify the dielectric surface, various self-assembled monolayers and polymer thin films with different functional groups were introduced. Electrical measurements of the a-IGZO TFTs using surface-modified gate dielectrics revealed that the threshold voltages shifted toward positive values as the surface functional groups attract more electrons in the a-IGZO thin films. These results indicate that the channel conductance and carrier density of a-IGZO TFTs could be tuned by simple modification of the dielectric surfaces with organic materials. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691920]
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