Patterned oxide semiconductor by electrohydrodynamic jet printing for transparent thin film transistors
- Authors
- Lee, Sangkyu; Kim, Jeonghyun; Choi, Junghyun; Park, Hyunjung; Ha, Jaehwan; Kim, Yongkwan; Rogers, John A.; Paik, Ungyu
- Issue Date
- Mar-2012
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.100, no.10, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 100
- Number
- 10
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166157
- DOI
- 10.1063/1.3691177
- ISSN
- 0003-6951
- Abstract
- This paper explores transport in transparent thin film transistors formed using a liquid precursor to indium zinc oxide, delivered to target substrates by electrohydrodynamic jet (e-jet) printing. Under optimized conditions, we observe field effect mobilities as high as 32 cm(2) V(-1)s(-1), with on/off current ratios of 10(3) and threshold voltages of 2 V. These results provide evidence that material manipulated in fine-jet, electric field induced liquid flows can yield semiconductor devices without any adverse effects of residual charge or unintentional doping. E-jet printing methods provide levels of resolution (similar to 1.5 mu m) that provide a path to printed transistors with small critical dimensions.
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