Memory Effect of Low-Temperature Processed ZnO Thin-Film Transistors Having Metallic Nanoparticles as Charge Trapping Elements
- Authors
- Park, Young-Su; Kim, Soo-Jin; Lyu, Si-Hoon; Lee, Byoung Hoon; Sung, Myung Mo; Lee, Jaegab; Lee, Jang-Sik
- Issue Date
- Feb-2012
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Non-Volatile Memory; Zinc Oxide; Metallic Nanoparticles; Charge Trapping
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.2, pp.1344 - 1347
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 12
- Number
- 2
- Start Page
- 1344
- End Page
- 1347
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166339
- DOI
- 10.1166/jnn.2012.4688
- ISSN
- 1533-4880
- Abstract
- In this study, non-volatile memory effect was characterized using the single-transistor-based memory devices based on self-assembled gold nanoparticles (Au-NP) as the charge trapping elements and atomic-layer deposited ZnO as the channel layer. The fabricated memory devices showed controllable and reliable threshold voltage shifts according to the program/erase operations that resulted from the charging/discharging of charge carriers in the charge trapping elements. Reliable non-volatile memory properties were also confirmed by the endurance and data retention measurements. The low temperature processes of the key device elements, i.e., Au-NP charge trapping layer and ZnO channel layer, enable the use of this device structure to the transparent/flexible non-volatile memory applications in the near future.
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