The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
- Authors
- Park, Taeyong; Choi, Dongjin; Choi, Hagyoung; Jeon, Hyeongtag
- Issue Date
- Feb-2012
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- remote plasma atomic layer deposition; ruthenium films; TEM
- Citation
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.209, no.2, pp.302 - 305
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Volume
- 209
- Number
- 2
- Start Page
- 302
- End Page
- 305
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166376
- DOI
- 10.1002/pssa.201127280
- ISSN
- 1862-6300
- Abstract
- By using remote plasma atomic layer deposition (ALD), ruthenium thin films were deposited on SiO2 using bis(ethylcy-clopentadienyl) ruthenium [Ru(EtCp)(2)] as a Ru precursor and an ammonia plasma as a reactant. Different plasma treatments were applied, and the best results were obtained with the Ar plasma-treated SiO2 surface. The initial transition region usually observed with Ru deposition before continuous film formation was present, and the number of ALD cycles required to obtain a continuous film was reduced to about 35 cycles on the Ar plasma-treated SiO2 substrates. The transition region of Ru cluster growth on Ar plasma-treated SiO2 was investigated with transmission electron microscopy (TEM). Most of the Ru clusters were larger and better crystallized on the Ar plasma-treated SiO2 than on untreated SiO2. Also, Ru films deposited on the treated SiO2 exhibited a (002) preferred orientated structure with a film resistivity of about 10.26 mu Omega V-cm. The growth rates of Ru after passing the transition region were similar on both the treated and untreated SiO2 at about 1.7 angstrom/cycles. From the Auger electron spectroscopy (AES) spectrum, a very low content of oxygen was observed in the Ru films. About 9% carbon was detected by a rutherford backscattering spectrometer (RBS).
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