Origin of Device Performance Degradation in InGaZnO Thin-Film Transistors after Crystallization
- Authors
- Ahn, Byung Du; Shin, Hyun Soo; Kim, Dong Lim; Lee, Seung Min; Park, Jin Seong; Kim, Gun Hee; Kim, Hyun Jae
- Issue Date
- Jan-2012
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.1, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 51
- Number
- 1
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166429
- DOI
- 10.1143/JJAP.51.015601
- ISSN
- 0021-4922
- Abstract
- This paper reports the crystallization of amorphous InGaZnO (a-IGZO) films using solid-phase crystallization and discusses the mechanisms responsible for degradation of device performance after crystallization. The field-effect mobility (mu(FE)) and subthreshold gate swing (S) value of the nanocrystallite embedded-IGZO thin-film transistors (TFTs) were significantly degraded to 3.12 cm(2) V-1 s(-1) and 1.26 V/decade, respectively, compared to those (13.72 cm(2) V-1 s(-1) and 0.38 V/decade) for the a-IGZO TFTs. The decreased mu(FE) is explained based on indium deficiency by diffusion of its atoms in the channel layer and grain-boundary trapping of mobile carriers. The predominant mechanism of increasing S value has been attributed to increased interface and grain-boundary trapping.
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