High-Performance Low-Voltage Organic Field-Effect Transistors Prepared on Electro-Polished Aluminum Wires
- Authors
- Nam, Sooji; Jang, Jaeyoung; Park, Jong-Jin; Kim, Sang Won; Park, Chan Eon; Kim, Jong Min
- Issue Date
- Jan-2012
- Publisher
- AMER CHEMICAL SOC
- Keywords
- low-voltage; bending-stability; hysteresis-free; metallic fiber; organic field-effect transistors; e-textiles
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.4, no.1, pp.6 - 10
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 4
- Number
- 1
- Start Page
- 6
- End Page
- 10
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166439
- DOI
- 10.1021/am2011405
- ISSN
- 1944-8244
- Abstract
- We report the preparation of high-performance low-voltage pentacene-based organic field-effect transistors (OFETs) fabricated on a metallic fiber (Al wire) substrate. The surface roughness of the wire was significantly reduced after 10 min of electro-polishing. A 120 nm thick Al2O3 gate dielectric layer was deposited on the anodized wire, followed by octadecyltrichlorosilane (ODTS) treatment. The ODTS-modified Al2O3 gate dielectrics formed around the Al wire showed a high capacitance of 50.1 nF cm(-2) and hydrophobic surface characteristics. The resulting OFETs exhibited hysteresis-free operation with a high mobility of 0.345 cm(2) V-1 s(-1) within a low operating voltage range of -5 V, and maintained their high performance at an applied tensile strain of bending radius similar to 2.2.
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