Thickness and material dependence of capping layers on flatband voltage (V-FB) and equivalent oxide thickness (EOT) with high-k gate dielectric/metal gate stack for gate-first process applications
- Authors
- Choi, Changhwan
- Issue Date
- Jan-2012
- Publisher
- ELSEVIER
- Keywords
- Work-function; High-k gate dielectric; Metal gate; EOT scaling; CMOS integration
- Citation
- MICROELECTRONIC ENGINEERING, v.89, pp.34 - 36
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONIC ENGINEERING
- Volume
- 89
- Start Page
- 34
- End Page
- 36
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166527
- DOI
- 10.1016/j.mee.2011.01.034
- ISSN
- 0167-9317
- Abstract
- We investigated controllability and scalability of flatband voltage (V-FB) and equivalent oxide thickness (EOT) using various thin capping films such as single layers (Hf, La, Ti, Al, Ta) and mixed layers (Hf/Ti, Al/Ti, Ta/Ti) with high-k gate dielectric/metal gate stack for gate-first process. With increasing thickness, negative V-FB shift observed with Hf and La while Ti and Al provided positive shift in conjunction with EOT scaling down to 0.6 nm simultaneously. Ti-based mixed cap layers showed both positive V-FB shift and EOT scaling with increasing thickness and higher Ti ratio. Al cap exhibited turn-around effect in V-FB shift behaviors beyond 0.7 nm thickness, which is attributed to strong scavenging interfacial layer rather than dipole formation. Based on V-FB modulation and EOT scaling, we propose novel process integration scheme for the gate first CMOS by adjusting Al composition in TiAlN single metal gate.
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