Gadolinium nitride films deposited using a PEALD based process
- Authors
- Fang, Ziwen; Williams, Paul A.; Odedra, Rajesh; Jeon, Hyeongtag; Potter, Richard J.
- Issue Date
- Jan-2012
- Publisher
- ELSEVIER
- Keywords
- Auger electron spectroscopy; Medium energy ion scattering; Atomic layer deposition; Gadolinium compounds; Nitrides; Magnetic materials
- Citation
- JOURNAL OF CRYSTAL GROWTH, v.338, no.1, pp.111 - 117
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF CRYSTAL GROWTH
- Volume
- 338
- Number
- 1
- Start Page
- 111
- End Page
- 117
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/166538
- DOI
- 10.1016/j.jcrysgro.2011.10.049
- ISSN
- 0022-0248
- Abstract
- Gadolinium nitride films have been deposited on Si(100) using a plasma-enhanced ALD (PEALD) based process. The deposition was carried out using tris(methylcyclopentadienyl)gadolinium {Gd(MeCp)(3)} and remote nitrogen plasma, separated by argon pulses. Films were deposited at temperatures between 150 and 300 C and capped with tantalum nitride to prevent post-deposition oxidation. Film composition was initially assessed using EDX and selected samples were subsequently depth profiled using medium energy ion scattering (MEIS) or AES. X-ray diffraction appears to show that the films are effectively amorphous. Films deposited at 200 degrees C were found to have a Gd:N ratio close to 1:1 and a low oxygen incorporation (similar to 5%). Although the growth was affected by partial thermal decomposition of the Gd(MeCp)3, it was still possible to obtain smooth (Ra.=similar to 0.7 nm) films with good thickness uniformity (97%). Less successful attempts to deposit gadolinium nitride using thermal ALD with ammonia or mono-methyl-hydrazine are also reported.
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