Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Field enhancement effect by multi-tunnel layer in metal-silicide nanocrystals nonvolatile memory
- Authors
- Lee, Dong Uk; Lee, Hyo Jun; Han, Dong Seok; Kim, Seon Pil; Kim, Eun Kyu; You, Hee-Wook; Cho, Won-Ju
- Issue Date
- Dec-2011
- Publisher
- American Institute of Physics
- Citation
- AIP Conference Proceedings, v.1399, pp.945 - 946
- Indexed
- SCOPUS
- Journal Title
- AIP Conference Proceedings
- Volume
- 1399
- Start Page
- 945
- End Page
- 946
- ISSN
- 0094-243X
- Abstract
- Nonvolatile memory devices with TiSi 2 and WSi 2 nanocrystals on the SiO 2/Si 3N 4/SiO 2 (ONO) and Si 3N 4/SiO 2/Si 3N 4 (NON) tunnel layers were fabricated and their electrical properties were characterized. For the WSi 2 nanocrystals memory, the threshold voltage shift (ΔV TH) maintained about 1.3 V at 125°C, when program/erase (P/E) speeds were 50 ms. After P/E at ±7 V for 100 ms, ΔV TH of the TiSi 2 memory with NON tunnel layer was about 0.7 V, while ΔV TH of the WSi 2 memory with ONO tunnel layer was approximately 1 V after applied P/E pulse at ±8 V for 50 ms.
- Files in This Item
- Go to Link
- Appears in
Collections - 서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.