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Low resistive and uniform CoSi 2 formation with Ti capping layer
- Issue Date
- Dec-2011
- Publisher
- American Institute of Physics
- Keywords
- CCTBA; cobalt silicide; metal organic chemical vapor deposition (MOCVD); Ti capping layer
- Citation
- AIP Conference Proceedings, v.1399, pp 187 - 188
- Pages
- 2
- Indexed
- SCOPUS
- Journal Title
- AIP Conference Proceedings
- Volume
- 1399
- Start Page
- 187
- End Page
- 188
- ISSN
- 0094-243X
- Abstract
- We have examined the interface morphologies CoSi 2 layer after Co films deposition with and without Ti capping layer followed by RTA. In the case of Co film without Ti capping layer, the interface between CoSi 2 and Si substrate exhibited significantly rough and wavy morphology. On the other hand, CoSi 2 layer with Ti capping layer, showed a relatively smooth and uniform surface and interface morphologies. Therefore, the surface and interface roughness of CoSi 2 layer were improved by Ti capping layer. This smooth CoSi 2 layer can improve the contact resistance and the thermal stability for applications in ultra-large-scale integration (ULSI) devices.
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