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Effect of the Ti molar ratio on the electrical characteristics of titanium-indium-zinc-oxide thin-film transistors fabricated by using a solution process
- Authors
- Chong, Ho Yong; Han, Kyu Wan; No, Young Soo; Kim, Tae Whan
- Issue Date
- Oct-2011
- Publisher
- AMER INST PHYSICS
- Keywords
- carrier density; indium compounds; thin film transistors; titanium compounds; X-ray photoelectron spectra
- Citation
- APPLIED PHYSICS LETTERS, v.99, no.16, pp.1 - 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 99
- Number
- 16
- Start Page
- 1
- End Page
- 3
- ISSN
- 0003-6951
- Abstract
- Thin film transistors (TFTs) utilizing TiInZnO (TIZO) channel layers with different Ti molar ratios were fabricated by using a solution process. X-ray photoelectron spectroscopy spectra for the TIZO film exhibited that the Ti 2p(1/2) peak intensity increased with increasing Ti molar ratio. The addition of the Ti atoms in the TIZO films changed their carrier concentration due to the decrease of O(2-) ions, resulting in a positive shift of the threshold voltage and in a decrease of the off-current. The on/off current ratio of the TFTs with a 10% Ti molar ratio was as large as 0.21 x 10(7).
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