21-dB gain ultra-wideband complementary metal-oxide semiconductor low-noise amplifier with current-reuse technique

Abstract

A high-gain and wideband low-noise amplifier (LNA) employing a current-reuse technique is proposed. The current-reuse technique adopted at the first stage yields an exceptionally high gain due to the summation of n-type metal-oxide semiconductor (MOS) and p-type MOS transconductances, showing wide input matching with the aid of source inductors and load effects. The proposed LNA achieves better than 10 dB input return loss from 3.0 to 9.2 GHz, a minimum noise figure of 2.9 dB, a maximum power gain of 21 dB, a gain-bandwidth product of 554 GHz and a figure of merit of 31.8 GHz/mW while consuming 12.8 mW from 7.1 mA and 1.8 V. The proposed LNA is fabricated using a 0.18-mm complementary MOS process.