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Role of the crystallinity of ZnO films in the electrical properties of bottom-gate thin film transistors
- Authors
- Lee, Ju Ho; Ahn, Cheol Hyoun; Hwang, Sooyeon; Woo, Chang Ho; Park, Jin-Seong; Cho, Hyung Koun; Lee, Jeong Yong
- Issue Date
- Aug-2011
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- ZnO; Thin film transistor; Hump; Microstructure; Ostwald ripening
- Citation
- THIN SOLID FILMS, v.519, no.20, pp.6801 - 6805
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 519
- Number
- 20
- Start Page
- 6801
- End Page
- 6805
- ISSN
- 0040-6090
- Abstract
- The strong correlation between the microstructural characteristics of ZnO channel layers grown at various temperatures by radio-frequency magnetron sputtering and the electrical performances of resulting bottom-gate thin film transistors (TFTs) was reported. Transmission electron microscopy revealed that increasing growth temperature enhanced degree of c-axis preferred orientation and enlarged width of columns in the ZnO films. The ZnO channel layers grown at 250 and 350 degrees C exhibited TFT saturation behavior. However, growing them at ˃= 350 degrees C produced small grains in the junctions of ZnO/SiO(2) interface and grain boundaries, which led to hump behavior in TFT transfer curve caused by formation of additional boundaries.
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Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)