Electrical Characteristics of Nanoscale NAND Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory Devices Fabricated on SOI Substrates
- Authors
- Ryu, Ju Tae; You, Joo Hyung; Yoo, Keon-Ho; Kim, Tae Whan
- Issue Date
- Aug-2011
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- SONOS; Silicon-on-Insulator; NAND; Flash Memory
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.11, no.8, pp.7512 - 7515
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 11
- Number
- 8
- Start Page
- 7512
- End Page
- 7515
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/167877
- DOI
- 10.1166/jnn.2011.4844
- ISSN
- 1533-4880
- Abstract
- NAND silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices with double gates fabricated on silicon-on-insulator (SOI) substrates were proposed. The current voltage characteristics related to the programming operation of the designed nanoscale NAND SONOS flash memory devices on a SOI substrate and on the conventional bulk-Si substrate were simulated and compared in order to investigate device characteristics of the scaled-down memory devices. The simulation results showed that the short channel effect and the subthreshod leakage current for the memory device with a large spacer length were lower than that of the memory device with a small spacer length due to increase of the effective channel length. The device performance of the memory device utilizing the SOI substrate exhibited a smaller subthreshold swing and a larger drain current level in comparison with those on the bulk-Si substrate. These improved electrical characteristices for the SOI devices could be explained by comparing the electric field distribution in a channel region for both devices.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/167877)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.