Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Effects of SiO2 Encapsulation and Laser Processing on Single CdTe/ZnTe Quantum Dots Grown on Si (001) Substrates
- Issue Date
- Aug-2011
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Single quantum dots; CdTe; Optical tuning; SiO2; Laser processing
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.59, no.2, pp.489 - 492
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 59
- Number
- 2
- Start Page
- 489
- End Page
- 492
- ISSN
- 0374-4884
- Abstract
- Micro-photoluminescence (mu-PL) measurements are carried out to investigate the effects of SiO2 encapsulation and laser processing of single CdTe/ZnTe quantum dots (QDs) grown on Si (001) substrates by using molecular beam epitaxy and atomic layer epitaxy. After laser processing, the PI, peak shift for the 200-nm SiO2 capped single QD is larger than that of the as-grown sample. The large mu-PL peak shift in the 200-nm SiO2 capped sample is related to the compressive stress induced by the ZnTe cap layer during laser processing. These results indicate that SiO2 encapsulation and laser processing represent effective methods for achieving local wavelength tuning in single QDs.
- Files in This Item
- Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.