Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask
- Authors
- Kang, Chang Goo; Kang, Jang Won; Lee, Sang Kyung; Lee, Seung Yong; Cho, Chun Hum; Hwang, Hyeon Jun; Lee, Young Gon; Heo, Jinseong; Chung, Hyun-Jong; Yang, Heejun; Seo, Sunae; Park, Seong-Ju; Ko, Ki Young; Ahn, Jinho; Lee, Byoung Hun
- Issue Date
- Jul-2011
- Publisher
- IOP PUBLISHING LTD
- Citation
- NANOTECHNOLOGY, v.22, no.29, pp.1 - 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOTECHNOLOGY
- Volume
- 22
- Number
- 29
- Start Page
- 1
- End Page
- 7
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168101
- DOI
- 10.1088/0957-4484/22/29/295201
- ISSN
- 0957-4484
- Abstract
- A graphene nanoribbon (GNR) is an important basic structure to open a bandgap in graphene. The GNR processes reported in the literature are complex, time-consuming, and expensive; moreover, the device yield is relatively low. In this paper, a simple new process to fabricate a long and straight graphene nanoribbon with a high yield has been proposed. This process utilizes CVD graphene substrate and a ZnO nanowire as the hardmask for patterning. 8 mu m long and 50-100 nm wide GNRs were successfully demonstrated in high density without any trimming, and similar to 10% device yield was realized with a top-down patterning process. After passivating the surfaces of the GNRs using a low temperature atomic layer deposition (ALD) of Al2O3, high performance GNR MOSFETs with symmetric drain-current-gate-voltage (I-d-V-g) curves were demonstrated and a field effect mobility up to similar to 1200 cm(2) V-1 s(-1) was achieved at V-d = 10 mV.
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