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Optical spectroscopy of single Cd0.6Zn0.4Te/ZnTe quantum dots on Si substrate
- Issue Date
- Jul-2011
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Cadmium zinc telluride; II-VI compound semiconductors; Quantum dots; Si substrate; Single dot spectroscopy; Photoluminescence; Molecular beam epitaxy
- Citation
- THIN SOLID FILMS, v.519, no.19, pp.6554 - 6556
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 519
- Number
- 19
- Start Page
- 6554
- End Page
- 6556
- ISSN
- 0040-6090
- Abstract
- Microphotoluminescence (mu-PL) measurements were carried out to investigate the optical properties of single Cd0.6Zn0.4Te/ZnTe quantum dots (QDs) grown on Si (001) substrate by using molecular beam epitaxy. The high quality of single Cd0.6Zn0.4Te/ZnTe QDs is witnessed by resolution-limited emission, negligible background and absence of measurable spectral jitter or blinking. Polarization-dependent and power-dependent mu-PL spectroscopy measurements were performed to identify the exciton, the biexciton, and the charged exciton in the emission spectra of single QDs. Furthermore a weak linearly polarized line is observed on the low energy side of the neutral exciton and is ascribed to dark exciton recombination.
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