Effect of the Physical and the Chemical Structures of Ni Nanocrystals on the Nonvolatile Memory Characteristics for Small-molecule Nonvolatile Memorycells Embedded with Ni Nanocrystals
- Authors
- Nam, Woo-Sik; Park, Jea-Gun
- Issue Date
- Jun-2011
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Nonvolatile memory; Physical structure; Ni nanocrystal
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, no.6, pp.1633 - 1637
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 58
- Number
- 6
- Start Page
- 1633
- End Page
- 1637
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168325
- DOI
- 10.3938/jkps.58.1633
- ISSN
- 0374-4884
- Abstract
- We determined the effects of the evaporation rate of the Ni layer and the presence of in-situ O-2 plasma oxidation on the physical and the chemical structures of Ni nanocrystals embedded in small-molecule (Alq3: aluminum tris(8-hydroxyquinoline)) memorycells. The Ni nanocrystals produced by an evaporation rate of 0.1 angstrom/s for the Ni layer with in-situ O-2 plasma oxidation were well isolated from one another by a NiO tunneling barrier. The small-molecule memorycell embedded with isolated Ni nanocrystals surrounded by a NiO tunneling barrier demonstrated a memory margin (I-on/I-off ratio) of approximate to 1 x 10(3), a retention time of more than 10(5) sec, and an endurance of more than 2 x 10(2) erase-and-program cycles.
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