Charge trapping process of nonvolatile memory devices based on CdTe and CdTe-CdSe core-shell nanoparticles/poly(methylmethacrylate) nanocomposites
- Authors
- Yun, Dong Yeol; Son, Jung Min; Kim, Tae Whan; Kim, Sung Woo; Kim, Sang Wook
- Issue Date
- Jun-2011
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.98, no.24, pp.1 - 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 98
- Number
- 24
- Start Page
- 1
- End Page
- 3
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168339
- DOI
- 10.1063/1.3596705
- ISSN
- 0003-6951
- Abstract
- Nonvolatile memory devices based on CdTe and CdTe-CdSe core-shell nanoparticles embedded in a poly(methylmethacrylate) (PMMA) layer were fabricated to investigate the variation in the carrier transport mechanisms due to a CdSe shell. Capacitance-voltage (C-V) curves for Al/CdTe nanoparticles embedded in PMMA/p-Si and Al/CdTe-CdSe nanoparticles embedded in PMMA/p-Si devices at 300 K showed that the flatband voltage shift of the C-V curve for the device with the CdTe-CdSe nanoparticles was relatively smaller than that for the device with the CdTe nanoparticle. Carrier transport mechanisms of the memory devices are described by using the C-V results, energy band diagrams, and capacitance-time retentions.
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