The characteristics of organic light emitting diodes with Al doped zinc oxide grown by atomic layer deposition as a transparent conductive anode
- Authors
- Gong, Su Cheol; Jang, Ji Geun; Chang, Ho Jung; Park, Jin-Seong
- Issue Date
- May-2011
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Al doped ZnO (AZO); Transparent conductive oxide (TCO); Organic light emitting diodes (OLEDs); Atomic layer deposition (ALD)
- Citation
- SYNTHETIC METALS, v.161, no.9-10, pp.823 - 827
- Indexed
- SCIE
SCOPUS
- Journal Title
- SYNTHETIC METALS
- Volume
- 161
- Number
- 9-10
- Start Page
- 823
- End Page
- 827
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168450
- DOI
- 10.1016/j.synthmet.2011.02.007
- ISSN
- 0379-6779
- Abstract
- Al doped zinc oxide (AZO) films, deposited by atomic layer deposition (ALD) were investigated for applying a transparent conductive oxide (TCO) layer as an anode for organic light emitting diode (OLED) devices. AZO films with a thickness of 100 nm were deposited at various Al atomic ratios ranging from 0 to 5% at a deposition temperature (250 degrees C). The optimum electrical properties: the carrier mobility, the resistivity, and the sheet resistance for the 2% AZO film were found to be 16.2 cm(2) V-1 s(-1), 1.5 x 10(-3) cm(-3), and 217 Omega/sq. respectively. The red OLED devices were fabricated using AZO anodes utilizing the various Al atomic ratios; the electrical and optical characteristics were then investigated. The best luminance, quantum efficiency, and current efficiency were found in the OLED device using the 2% AZO TCO; the results were 16599 cd/m(2), 8.2%, and 7.5 cd/A, respectively.
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