Effect of InAs Thickness on the Structural and the Electrical Properties of InAs Layers Grown on GaAs Substrates with an AlAs0.32Sb0.68 Buffer Layer
- Authors
- Kim, Seon-Yung; Song, Jin Dong; Kim, Tae-Won
- Issue Date
- May-2011
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- InAs; AlAsSb; MBE; Structural property; Electrical property
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, no.5, pp.1347 - 1350
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 58
- Number
- 5
- Start Page
- 1347
- End Page
- 1350
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168550
- DOI
- 10.3938/jkps.58.1347
- ISSN
- 0374-4884
- Abstract
- InAs layers on GaAs substrates with AlAs0.32Sb0.68 buffer layers were grown by using molecular beam epitaxy. X-ray diffraction patterns showed that the dominant peaks corresponding to the GaAs, InAs, and AlAs0.32Sb0.68 layers appeared. Atomic force microscopy images showed that the root-mean-square surface roughness of the InAs surface increased with increasing thickness of the InAs layer due to the lattice-constant difference between the InAs and the AlAs0.32Sb0.68 layers, resulting in relaxation of the strain in the InAs layer. Hall effect measurements at 300 K showed that the electron mobility increased with increasing InAs film thickness.
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