A novel fault detection circuit for short-circuit faults of IGBT
- Authors
- Kim, Min-Sub; Park, Byoung-Gun; Kim, Rae-Young; Hyun, Dong-Seok
- Issue Date
- Apr-2011
- Publisher
- IEEE
- Citation
- Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, pp.359 - 363
- Indexed
- SCOPUS
- Journal Title
- Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
- Start Page
- 359
- End Page
- 363
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168714
- DOI
- 10.1109/APEC.2011.5744621
- Abstract
- This paper proposed a novel fault detection circuit comparing the gate voltage of IGBT. The proposed scheme is operated to protect IGBT under short-circuit faults such as hard switch-fault (HSF). The proposed circuit consists of two parts. One is the difference generator which generates a difference between a gate voltage and an input voltage. The other is the short-circuit fault detector using a charged voltage of capacitor for short-circuit fault detection. The feasibility of the proposed short-circuit detecting scheme is verified by simulation results.
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