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A novel fault detection circuit for short-circuit faults of IGBT

Authors
Kim, Min-SubPark, Byoung-GunKim, Rae-YoungHyun, Dong-Seok
Issue Date
Apr-2011
Publisher
IEEE
Citation
Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, pp.359 - 363
Indexed
SCOPUS
Journal Title
Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
Start Page
359
End Page
363
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168714
DOI
10.1109/APEC.2011.5744621
Abstract
This paper proposed a novel fault detection circuit comparing the gate voltage of IGBT. The proposed scheme is operated to protect IGBT under short-circuit faults such as hard switch-fault (HSF). The proposed circuit consists of two parts. One is the difference generator which generates a difference between a gate voltage and an input voltage. The other is the short-circuit fault detector using a charged voltage of capacitor for short-circuit fault detection. The feasibility of the proposed short-circuit detecting scheme is verified by simulation results.
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Kim, Rae Young
COLLEGE OF ENGINEERING (MAJOR IN ELECTRICAL ENGINEERING)
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