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Effects of r-plane Sapphire Substrate Tilt Angles on the Growth Behavior of Nonpolar a-plane GaN
- Authors
- Park, Sung Hyun; Park, Jinsub; Moon, Daeyoung; Kim, Namhyuk; You, Duck-Jae; Kim, Junghwan; Kang, Jinki; Lee, Sang-Moon; Kim, Ju-Sung; Yang, Moon-Seung; Kim, Taek; Yoon, Euijoon
- Issue Date
- Apr-2011
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Nonpolar; Tilt angle; r-plane sapphire; a-plane GaN; MOCVD
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, no.4, pp.906 - 910
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 58
- Number
- 4
- Start Page
- 906
- End Page
- 910
- ISSN
- 0374-4884
- Abstract
- We investigated the effect of a slight tilt of an r-plane sapphire substrate on the morphological properties of a-plane GaN grown by using metal-organic chemical vapor deposition. The tilt angle of the r-plane sapphire was varied from 0 degrees to -0.65 degrees toward the c-axis of sapphire. Slight tilt angles of the r-plane sapphire toward the c-axis of sapphire ranging from 0 degrees to -0.37 degrees were found to be suitable for growing triangular pit-free a-plane GaN with a microscopically smooth surface. Tilt angles larger than -0.37 degrees improved the crystalline quality in the direction of the m- axis of GaN but caused non-uniform growth and pit formation on the surface.
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Related Researcher
- Park, Jinsub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)