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Pixel-Level Digital-to-Analog Conversion Scheme with Compensation of Thin-Film-Transistor Variations for Compact Integrated Data Drivers of Active Matrix Organic Light Emitting Diodes

Authors
Kim, Tae-WookPark, Sang-GyuChoi, Byong-Deok
Issue Date
Mar-2011
Publisher
IOP Publishing Ltd
Citation
Japanese Journal of Applied Physics, v.50, no.3, pp 1 - 9
Pages
9
Indexed
SCI
SCIE
Journal Title
Japanese Journal of Applied Physics
Volume
50
Number
3
Start Page
1
End Page
9
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168895
DOI
10.1143/JJAP.50.03CC02
ISSN
0021-4922
1347-4065
Abstract
The previous pixel-level digital-to-analog-conversion (DAC) scheme that implements a part of a DAC in a pixel circuit turned out to be very efficient for reducing the peripheral area of an integrated data driver fabricated with low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs). However, how the pixel-level DAC can be compatible with the existing pixel circuits including compensation schemes of TFT variations and IR drops on supply rails, which is of primary importance for active matrix organic light emitting diodes (AMOLEDs) is an issue in this scheme, because LTPS TFTs suffer from random variations in their characteristics. In this paper, we show that the pixel-level DAC scheme can be successfully used with the previous compensation schemes by giving two examples of voltage-and current-programming pixels. The previous pixel-level DAC schemes require additional two TFTs and one capacitor, but for these newly proposed pixel circuits, the overhead is no more than two TFTs by utilizing the already existing capacitor. In addition, through a detailed analysis, it has been shown that the pixel-level DAC can be expanded to a 4-bit resolution, or be applied together with 1 : 2 demultiplexing driving for 6- to 8-in. diagonal XGA AMOLED display panels.
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