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Dependence of the trap density and the distribution on the current bistability in organic bistable devices

Authors
You, Chan HoJung, Jae HunKwak, Jin KuKim, Tae Whan
Issue Date
Mar-2011
Publisher
ELSEVIER SCIENCE BV
Keywords
Organic layer; Organic bistable devices; Electrical properties
Citation
CURRENT APPLIED PHYSICS, v.11, no.2, pp.E40 - E43
Indexed
SCIE
SCOPUS
KCI
Journal Title
CURRENT APPLIED PHYSICS
Volume
11
Number
2
Start Page
E40
End Page
E43
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/168935
DOI
10.1016/j.cap.2010.11.120
ISSN
1567-1739
Abstract
Dependence of the trap density and the distribution on the current bistability in organic bistable devices (OBDs) was investigated by using the space charge limited current (SCLC) model. The single level trap and the Gaussian trap distributions of the SCLC model were used to clarify the electrical bistability of two states with different conductivities. The electrical bistability of the modified SCLC model consisting of two Gaussian distributions with different trap depths provided more accurate results in comparison with that of different models. The calculation results of the current density-voltage characteristics for the OBDs taking into account the parallel resistor were in reasonable agreement with the experimental results.
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