Photo-EMF Sensitivity of Porous Silicon Thin Layer-Crystalline Silicon Heterojunction to Ammonia Adsorption
- Authors
- Vashpanov, Yuriy; Jung, Jae Il; Kwack, Kae Dal
- Issue Date
- Feb-2011
- Publisher
- MDPI AG
- Keywords
- gas sensors; porous silicon; heterojunction; photo-EMF
- Citation
- SENSORS, v.11, no.2, pp.1321 - 1327
- Indexed
- SCIE
SCOPUS
- Journal Title
- SENSORS
- Volume
- 11
- Number
- 2
- Start Page
- 1321
- End Page
- 1327
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/169082
- DOI
- 10.3390/s110201321
- ISSN
- 1424-8220
- Abstract
- A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.
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