Fabrication of trench nanostructures for extreme ultraviolet lithography masks by atomic force microscope lithography
- Authors
- Kwon, Gwangmin; Ko, Kyeongkeun; Lee, Haiwon; Lim, Woongsun; Yeom, Geun Young; Lee, Sunwoo; Ahn, Jinho
- Issue Date
- Jan-2011
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.29, no.1, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 29
- Number
- 1
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/169281
- DOI
- 10.1116/1.3534025
- ISSN
- 1071-1023
- Abstract
- We describe methods to fabricate extreme ultraviolet lithography (EUVL) absorber mask patterns by atomic force microscope (AFM) lithography and inductively coupled plasma (ICP) etching. AFM lithography, based on anodization and cross-linking polymer resist, was applied to fabricate trench structures using only Ta and Cr/Ta bilayers. In particular, the top Cr layer was used not only as a hard mask to etch the underlying Ta in dry-etching, but also as an absorber material together with Ta. The Cr oxide or Ta with respect to Cr was eliminated due to the clear etch-selectivity of ICP dry-etching using C4F8 gas. This is a simple fabrication technique using AFM lithography fabricated metal trenches for the production of isolated metal structures as well as for producing EUVL absorber patterns.
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