Synergistic hole-doping on ultrathin MoTe2 for highly stable unipolar field-effect transistor
- Authors
- Nguyen, Phuong Huyen; Nguyen, Duc Hieu; Kim, Hyojung; Jeong, Hyung Mo; Oh, Hye Min; Jeong, Mun Seok
- Issue Date
- Sep-2022
- Publisher
- ELSEVIER
- Keywords
- Atomically thin TMD; Surface charge-transfer doping; Hydrogen-bonding interaction; Carrier -type modulation; Synergistic effect
- Citation
- APPLIED SURFACE SCIENCE, v.596, pp.1 - 9
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 596
- Start Page
- 1
- End Page
- 9
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/170008
- DOI
- 10.1016/j.apsusc.2022.153567
- ISSN
- 0169-4332
- Abstract
- Despite an appropriate energy bandgap and potential to achieve unipolar p-type from initial ambipolar, the oxidative sensitivity nature of monolayer MoTe2 has hindered its further device development for practical electronic and optoelectronic applications. Here, we demonstrate a facile superacid (TFSI) doping approach to construct a highly stable unipolar p-type MoTe2 at the atomically thin limit, without harnessing its structure. From Raman analysis, a controllable hole-doping effect of MoTe2 is evident by tuning the TFSI molarity (м). Considerable shifts and sharpening in A1g peaks were observed, indicating the p-doping effect induced by TFSI treatment. When combining this technique with PMMA encapsulation, the obtained monolayer MoTe2 field-effect transistor (FET) displays dramatic conversion from ambipolar to unipolar p-type, high on/off ratio of 106, and mobility increases of up to 250 times, which is among the highest mobility increment factor to date. By integrating X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and atomic force microscopy techniques, it is further clarified that the hydrogen bonds between PMMA and TFSI are a key mechanism to enable oxidation prevention while also synergizing the doping effect of TFSI via an efficient electron-withdrawing network on monolayer MoTe2 FET.
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