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Experimental Decomposition of the Positive Gate-bias Temperature Stress-induced Instability and Its Modeling in InGaZnO Thin-film Transistors
- Authors
- 오새룬터
- Issue Date
- 20170830
- Place
- BEXCO, Busan, Korea
- Conference Name
- International Meeting on Information Display (IMID)
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Related Researcher
- OH, SAE ROON TER
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)