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Low temperature of 150 ℃ processed igto thin-film transistors for flexible display application
- Authors
- Choi, Cheol Hee; Kim, Taikyu; Jeong, Jae Kyeong
- Issue Date
- Jun-2022
- Publisher
- John Wiley and Sons Inc
- Keywords
- Alumina (Al2O3); Excess oxygen; Hydrogen; Indium-gallium-tin oxide (IGTO); Low temperature; Thin-film transistor (TFT)
- Citation
- Digest of Technical Papers - SID International Symposium, v.53, no.1, pp.1153 - 1156
- Indexed
- SCOPUS
- Volume
- 53
- Number
- 1
- Start Page
- 1153
- End Page
- 1156
- ISSN
- 0097-966X
- Abstract
- The high-performance amorphous In-Ga-Sn-O (a-IGTO) thin-film transistors (TFTs) was fabricated with plasma-enhanced atomic layer deposition (PEALD)-derived Al2O3 high-k gate dielectric at a maximum processing temperature of 150 ℃. During the deposition of Al2O3 dielectric on a-IGTO films, the hydrogen (H) and excess oxygen (Oi) defects from the Al2O3 act significant role on TFTs operation. The amounts of H and Oi can be controlled by adjusting oxygen plasma density in radio-frequency (rf) of PEALD. The optimized a-IGTO TFT exhibit high-performance electrical properties with field-effect mobility (µFE) of 58.8 cm2/Vs, subthreshold gate swing (SS) of 0.12 V/decade, threshold voltage (VTH) of 0.5 V.
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)