Formation mechanisms of GaN nanorods grown on Si(111) substrates
- Authors
- Kwon, Young H.; Lee, Kyoung Hu; Ryu, Sung Yoon; Kang, Tae Won; You, Chan Ho; Kim, Tae Whan
- Issue Date
- Aug-2008
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- GaN nanorods; microstructural properties; formation mechanism; hydride vapor phase epitaxy
- Citation
- APPLIED SURFACE SCIENCE, v.254, no.21, pp.7014 - 7017
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED SURFACE SCIENCE
- Volume
- 254
- Number
- 21
- Start Page
- 7014
- End Page
- 7017
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/171931
- DOI
- 10.1016/j.apsusc.2008.05.096
- ISSN
- 0169-4332
- Abstract
- Scanning electron microscopy (SEM) images, transmission electron microscopy (TEM) images, and selected-area electron diffraction (SAED) patterns showed that vertically well aligned GaN nanorods with c-axis-oriented crystalline wurzite structures were grown on Si(1 1 1) substrates by using hydride vapor phase epitaxy. The high-resolution TEM (HRTEM) images showed that the crystallized GaN nanorods contained very few defects and that they were consisted of {(1) over bar1 0 0}, {0 0 0 1}, and {(1) over bar 10} facets. The formation mechanisms for the GaN nanorods grown on Si(1 1 1) substrates are described on the basis of the SEM, TEM, SAED pattern, and HRTEM results.
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