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Electrical properties of Zn(Mn,Co)O films grown by pulsed laser deposition method
- Authors
- Kim, Jae-Hoon; Song, Hooyoung; Kim, Eun Kyu; Lee, Sejoon; Shon, Yoon
- Issue Date
- May-2008
- Publisher
- Electrochemical Society, Inc.
- Citation
- ECS Transactions, v.16, no.12, pp 27 - 31
- Pages
- 5
- Indexed
- SCOPUS
- Journal Title
- ECS Transactions
- Volume
- 16
- Number
- 12
- Start Page
- 27
- End Page
- 31
- ISSN
- 1938-5862
1938-6737
- Abstract
- High quality ZnO films were made by using a pulsed laser deposition (PLD) system. Through a same method magnetic element doped Zn(Mn,Co)O films were grown. An XRD measurement was tried and the result showed a single crystal of wurtzite structure. A capacitance-voltage measurement showed that the ZnMnO has electrical properties of an n-type semiconductor, and carrier concentration is 5 × 1018 cm-3. From a deep level transient spectroscopy (DLTS) measurement, an oxygen vacancy and a Mn-related electron trap in the ZnMnO film were appeared as Ec-0.62 eV and E c-0.13 eV, respectively. The electrical measurement of the ZnCoO films showed meaningless results because of its high conductance.
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