The effects of the ZnTe capping layer thickness on the optical and electronic properties in CdTe/ZnTe quantum dots
- Authors
- Lee, Hong Seok; Park, Hong Lee; Kim, Tae Whan
- Issue Date
- Feb-2008
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.92, no.5, pp.1 - 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 92
- Number
- 5
- Start Page
- 1
- End Page
- 3
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/172149
- DOI
- 10.1063/1.2841711
- ISSN
- 0003-6951
- Abstract
- Photoluminescence spectra showed that the excitonic peak corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band (E-1-HH1) in the CdTe/ZnTe quantum dots (QDs) was shifted to a higher energy with increasing thickness of the ZnTe cap layer. The intensity of the excitonic peak related to the E-1-HH1 transition for the CdTe/ZnTe QDs increased with increasing thickness of the ZnTe cap layer. The activation energy of the electrons confined in the CdTe/ZnTe QDs increased with increasing thickness of the ZnTe cap layer.
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